Infineon CoolMOS™ CFD7, N-Channel MOSFET, 600 V Vdss, 16 A Id @ 25°C, 160 mOhm Rds(on) @ 10 V, 31 nC Qg, PG-VSON-4, -40°C to 150°C Tj.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 16A (Tc) |
| Power dissipation | 95W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-PowerTSFN |
| Vgs(th) (Max) @ id | 4.5V @ 340µA |
| Rds on (Max) @ id, vgs | 160mOhm @ 6.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 31 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1330 pF @ 400 V |
The IPL60R160CFD7AUMA1: Total gate charge is 31 nC at 10 V, with an input capacitance of 1330 pF at 400 V drain-source. The 4-PowerTSFN / PG-VSON-4 package keeps source inductance low.
This part is rated for industrial and automotive environments where the ambient can push the junction near its limit.
ROHS3 compliant.
Maximum on-resistance is 160 mOhm at 6.8 A drain current with 10 V gate-to-source drive. This is the specification for conduction loss calculations in a 600 V-class switching converter.