IPL60R125P7AUMA1

Infineon Technologies · CoolMOS™ P7 Series

Infineon CoolMOS™ P7 series, IPL60R125P7AUMA1, N-Channel MOSFET, 600 V Vdss, 27 A Id, 125 mOhm Rds(on) at 10 V gate drive, 4-PowerTSFN package, surface mount.

Infineon Technologies IPL60R125P7AUMA1
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[IN STOCK] In Stock: 22 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPL60R125P7AUMA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ P7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C27A (Tc)
Power dissipation111W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case4-PowerTSFN
Vgs(th) (Max) @ id4V @ 410µA
Rds on (Max) @ id, vgs125mOhm @ 8.2A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1544 pF @ 400 V

Technical details

Gate charge and switching trajectory

That Qg sets the gate-driver current needed to hit a target switching frequency — at 100 kHz the average gate-drive current is about 3.6 mA, well within a standard driver's capability. Input capacitance Ciss is 1544 pF at 400 V drain bias, giving a manageable Miller plateau width for the turn-on transition.

Maximum power dissipation is 111 W at case temperature — that figure assumes an ideal heatsink; real-world dissipation is limited by the PCB copper area, ambient temperature, and airflow. The junction temperature rating goes to 150°C, so the thermal design must keep the junction below that at full load.

IPL60R125P7AUMA1
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