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Infineon Technologies IPL60R105P7AUMA1

IPL60R105P7AUMA1 CoolMOS™ P7 N-Channel MOSFET, 600 V, 33 A

MPNIPL60R105P7AUMA1
End of Life

Infineon CoolMOS™ P7 series, IPL60R105P7AUMA1, N-Channel MOSFET, 600 V Vdss, 33 A Id, 105 mOhm Rds(on) at 10 V, PG-VSON-4 package, -40°C to 150°C junction temperature.

$4.64Ref. price · indicative, final on quote
Packaging4-PowerTSFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPL60R105P7AUMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C33A (Tc)
Power dissipation137W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case4-PowerTSFN
Vgs(th) (Max) @ id4V @ 530µA
Rds on (Max) @ id, vgs105mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1952 pF @ 400 V

Product details

600 V, 33 A, 105 mOhm — the CoolMOS™ P7 sweet spot

The IPL60R105P7AUMA1: The 45 nC typical gate charge at Vgs = 10 V means the gate driver sees a moderate capacitive load. Layout matters: the PG-VSON-4 package has a large exposed drain pad on the bottom; the PCB copper area under that pad sets the junction-to-board thermal resistance.

Rds(on) is specified at Vgs = 10 V, which is the recommended drive voltage for the CoolMOS series. Driving at 10 V ensures the channel is fully enhanced; at lower gate voltages the on-resistance climbs steeply, and the ±20 V absolute maximum gate rating gives headroom for ringing on the gate node in a hard-switching topology. Input capacitance Ciss is 1952 pF typical at Vds = 400 V. This is a moderate value for a 600 V, 33 A part — it keeps the switching-node dv/dt manageable and reduces the Miller plateau duration. The gate threshold voltage is specified at a maximum of 4 V at Id = 530 µA. This means the device is fully off at Vgs = 0 V (enhancement mode) and begins conducting around 3–4 V. For designs using a 5 V gate drive rail, ensure the driver output reaches at least 8–10 V to minimise Rds(on) — the 4 V Vgs(th) is a turn-on threshold, not an on-state drive level.

RoHS3 compliance is confirmed — no exemptions for lead in solder or other restricted substances, which simplifies compliance declarations for EU and California markets. The CoolMOS series is Infineon's mainstream high-voltage MOSFET platform; the active status and broad installed base mean the part is widely stocked across the independent and authorised distribution network.

PG-VSON-4 — package and layout considerations

The 4-lead PowerTSFN package (PG-VSON-4) is a surface-mount, leadless package with a large exposed drain pad on the bottom. For a 33 A continuous current, the PCB copper pour on the drain node needs to be sized for the current density and heat spreading, not just the package footprint. The surface-mount mounting type means the part is reflow-soldered. The PG-VSON-4 package is compatible with standard lead-free reflow profiles. No through-hole or press-fit option exists.