Infineon CoolMOS™ CFD7 N-Channel MOSFET, 600 V, 25 A, 95 mOhm Rds(on) at 10 V, PG-VSON-4, -40 to 150 °C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 25A (Tc) |
| Power dissipation | 147W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-PowerTSFN |
| Vgs(th) (Max) @ id | 4.5V @ 570µA |
| Rds on (Max) @ id, vgs | 95mOhm @ 1.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 51 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2103 pF @ 400 V |
The pad requires a good solder joint to the board's copper plane to keep junction temperatures under 150 °C at 147 W dissipation.
The junction temperature range from -40 °C to 150 °C qualifies it for industrial power supplies and server PSUs.
Yes, it is ROHS3 compliant, meaning it meets the latest EU RoHS directive without exemptions.
The IPD50R950CEAUMA1 is a CoolMOS CE device with a 500 V drain-source rating, 4.3 A continuous current, and 950 mOhm Rds(on) — a lower-power alternative. It is not a pin-compatible replacement; the voltage, current, and package differ. For a direct functional match within the same CoolMOS CFD7 family, stay with the IPL60R095CFD7AUMA1.