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IPL60R085P7AUMA1

Infineon Technologies · CoolMOS™ P7 Series

Infineon CoolMOS™ P7 series, IPL60R085P7AUMA1, N-Channel MOSFET, 600 V Vdss, 39 A Id, 85 mOhm Rds(on) at 10 V Vgs, 51 nC Qg, PG-VSON-4 package, -40°C to 150°C junction temperature.

Infineon Technologies IPL60R085P7AUMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

IPL60R085P7AUMA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ P7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C39A (Tc)
Power dissipation154W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case4-PowerTSFN
Vgs(th) (Max) @ id4V @ 590µA
Rds on (Max) @ id, vgs85mOhm @ 11.8A, 10V
Gate charge (Qg) (Max) @ vgs51 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2180 pF @ 400 V

Technical details

600 V, 39 A N-channel MOSFET in PG-VSON-4

The Infineon IPL60R085P7AUMA1 is a 600 V, 39 A N-channel MOSFET from the CoolMOS™ P7 series, housed in a 4-PowerTSFN / PG-VSON-4 surface-mount package.

PG-VSON-4 — footprint and thermal path

The 4-PowerTSFN (PG-VSON-4) package is a compact, leadless surface-mount form factor. Solder paste coverage on the pad should follow the manufacturer's stencil recommendation to avoid voids.

Active lifecycle — no LTB concern

The ROHS3 compliance is current and covers EU RoHS exemption updates through the latest directive.

IPL60R085P7AUMA1
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