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Infineon Technologies IPL60R085P7AUMA1
Infineon Technologies

Infineon IPL60R085P7AUMA1 CoolMOS™ P7 N-Channel MOSFET

MPNIPL60R085P7AUMA1
End of Life

Infineon CoolMOS™ P7 series, IPL60R085P7AUMA1, N-Channel MOSFET, 600 V Vdss, 39 A Id, 85 mOhm Rds(on) at 10 V Vgs, 51 nC Qg, PG-VSON-4 package, -40°C to 150°C junction temperature.

$5.88Ref. price · indicative, final on quote
IPL60R085P7AUMA1 datasheet
Packaging4-PowerTSFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPL60R085P7AUMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C39A (Tc)
Power dissipation154W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case4-PowerTSFN
Vgs(th) (Max) @ id4V @ 590µA
Rds on (Max) @ id, vgs85mOhm @ 11.8A, 10V
Gate charge (Qg) (Max) @ vgs51 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2180 pF @ 400 V

Product details

600 V, 39 A N-channel MOSFET in PG-VSON-4

The Infineon IPL60R085P7AUMA1 is a 600 V, 39 A N-channel MOSFET from the CoolMOS™ P7 series, housed in a 4-PowerTSFN / PG-VSON-4 surface-mount package. It delivers an 85 mOhm typical on-resistance at 10 V gate drive, with a gate charge of 51 nC at 10 V. The junction temperature range spans -40°C to 150°C, suiting it for high-efficiency power conversion in industrial and automotive environments — PFC stages, LLC resonant converters, and flyback supplies where board space is tight and thermal management is handled through the exposed pad.

PG-VSON-4 — footprint and thermal path

The 4-PowerTSFN (PG-VSON-4) package is a compact, leadless surface-mount form factor. The exposed die pad on the underside is the primary thermal path — PCB layout must include a thermal via array under the pad to the ground plane. Solder paste coverage on the pad should follow the manufacturer's stencil recommendation to avoid voids. The package is compatible with standard reflow profiles; the ROHS3 compliance confirms no restricted substances above the exemption thresholds.

Active lifecycle — no LTB concern

The IPL60R085P7AUMA1 carries an active product status. There is no last-time-buy notice or NRND flag on record. The ROHS3 compliance is current and covers EU RoHS exemption updates through the latest directive.

Frequently asked questions

What is the Rds(on) of IPL60R085P7AUMA1 at 10V Vgs?

The maximum on-resistance is 85 mOhm at 11.8 A drain current with a 10 V gate drive. This is the rated condition for the lowest conduction loss; operation at lower gate voltages will increase Rds(on) per the typical transfer curve.

Is IPL60R085P7AUMA1 a direct replacement for IPP60R085P7?

The IPL60R085P7AUMA1 and IPP60R085P7 share the same CoolMOS™ P7 die and electrical ratings (600 V, 39 A, 85 mOhm), but the package differs — the IPL variant is in PG-VSON-4 (surface-mount), while the IPP variant is in TO-220 (through-hole). They are not direct drop-in replacements; the board layout must match the package footprint.

Does IPL60R085P7AUMA1 have a recommended equivalent or cross reference?

The evidence does not list an official cross-reference or second-source alternate for the IPL60R085P7AUMA1. The IPD50R950CEAUMA1 (CoolMOS™ CE series, 500 V, 4.3 A, 950 mOhm) is a different performance tier and not a functional equivalent. For dual-sourcing, consult Infineon's CoolMOS™ P7 portfolio for a pin-compatible variant with a similar Rds(on) and current rating.