Infineon CoolMOS™ P7 series, IPL60R065P7AUMA1, N-Channel MOSFET, 600 V Vdss, 41 A Id, 65 mOhm Rds(on) @ 10 V, PG-VSON-4 surface mount package.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 41A (Tc) |
| Power dissipation | 201W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-PowerTSFN |
| Vgs(th) (Max) @ id | 4V @ 800µA |
| Rds on (Max) @ id, vgs | 65mOhm @ 15.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 67 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2895 pF @ 400 V |
The moderate Ciss means the gate drive loop inductance needs attention to avoid ringing at turn-on.
The part comes in a 4-lead PowerTSFN package, also designated PG-VSON-4. A 2 oz copper, 4-layer board with thermal vias under the drain pad is the minimum to approach the rated current.
This is the Rds(on) value used for conduction loss calculations in the power stage.
Yes, it is ROHS3 compliant per the lifecycle record.