Infineon CoolMOS™ N-channel MOSFET, 900 V Vdss, 11 A continuous drain, 500 mOhm Rds(on) at 10 V gate drive, TO-262-3 (PG-TO262-3-1) through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 156W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Vgs(th) (Max) @ id | 3.5V @ 740µA |
| Rds on (Max) @ id, vgs | 500mOhm @ 6.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1700 pF @ 100 V |
The Infineon IPI90R500C3XKSA2 is a 900 V, 11 A N-channel CoolMOS™ MOSFET in a TO-262-3 through-hole package.
The TO-262-3 (PG-TO262-3-1) is a through-hole package with long leads, intended for heatsink mounting. The tab is the drain; the two short pins are gate and source. The through-hole form factor suits point-to-point wiring or prototype boards where surface-mount reflow is not available.
Yes, the 900 V Vdss and 11 A continuous drain current make it suitable for high-voltage power supply topologies such as PFC boost, flyback, and two-switch forward converters operating from universal AC input or three-phase rectified DC.
Lead time is confirmed at quote time when an RFQ is submitted. As an active part, standard distribution lead times typically apply, but current availability is verified per order.