40 V, 80 A, 3.7 mΩ — the conduction-loss ceiling for this TO-262 CoolMOS™
The Infineon IPI80N04S4-03 is an N-channel enhancement-mode CoolMOS™ power MOSFET in a through-hole TO-262-3 (PG-TO262-3-1) package. The 66 nC typical gate charge at 10 V keeps switching losses manageable in hard-switched topologies up to a few hundred kHz.
At 80 A load, conduction loss with the 3.7 mΩ maximum Rds(on) (at 10 V gate drive) is under 24 W — within the 94 W package limit, but the junction-to-case thermal path will need a heatsink sized for the duty cycle. The 66 nC gate charge means the gate driver should source at least 1 A peak to keep switching edges clean and cross-conduction low. The ±20 V maximum gate rating gives margin for ringing on long gate traces, but a 10 V drive rail is the sweet spot for minimum Rds(on).
For production programs that need a second-source hedge, Infineon's CoolMOS™ portfolio includes several 40 V N-channel TO-262 parts with similar Rds(on) and current ratings — parametric cross-reference is straightforward from the datasheet tables.