Infineon OptiMOS™ IPI70N04S406AKSA1, N-Channel MOSFET, 40 V Vdss, 70 A Id (Tc), 6.5 mOhm Rds(on) at 10 V, PG-TO262-3 through-hole, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 70A (Tc) |
| Power dissipation | 58W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4V @ 26µA |
| Rds on (Max) @ id, vgs | 6.5mOhm @ 70A, 10V |
| Gate charge (Qg) (Max) @ vgs | 32 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2550 pF @ 25 V |
The PG-TO262-3 package (long-lead I²Pak variant) is a through-hole design with three leads and a metal tab for direct heatsink mounting. The through-hole leads suit wave-solder assembly and provide mechanical robustness in high-vibration environments.
The maximum Rds(on) is 6.5 mOhm at 70 A drain current with 10 V gate drive, measured at 25°C junction temperature. At 175°C junction, expect the on-resistance to approximately double.
No discontinuation or last-time-buy has been announced.
Total gate charge is 32 nC at 10 V gate-source voltage. This is a moderate gate charge suited for switching frequencies up to several hundred kHz with a capable gate driver.