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Infineon Technologies IPI65R310CFDXKSA1700 — Logic ICs
Infineon Technologies

Infineon IPI65R310CFDXKSA1700 CoolMOS N-Ch MOSFET, 650 V

MPNIPI65R310CFDXKSA1700
End of Life

Infineon CoolMOS™ series, IPI65R310CFDXKSA1700, N-Channel MOSFET, 650 V drain-source, 310 mOhm Rds(on) at 10 V, 11.4 A continuous drain, TO-262-3 package, -55 to 150 °C.

$0.89Ref. price · indicative, final on quote
IPI65R310CFDXKSA1700 datasheet
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPI65R310CFDXKSA1700 Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11.4A (Tc)
Power dissipation104.2W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4.5V @ 440µA
Rds on (Max) @ id, vgs310mOhm @ 4.4A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1100 pF @ 100 V

Product details

The IPI65R310CFDXKSA1700: The TO-262-3 through-hole package (PG-TO262-3-1) suits designs where a heatsink is bolted directly to the tab.

Temperature range and dissipation — sizing the thermal path

Maximum power dissipation is 104.2 W at case temperature — a figure that assumes an ideal heatsink; real designs need the thermal resistance from junction to case (not listed here) to size the heatsink. The 1100 pF input capacitance at 100 V drain-source gives a first-order estimate of the gate-drive current required at the target switching frequency.

Frequently asked questions

What is the Rds(on) of IPI65R310CFDXKSA1700?

Maximum on-resistance is 310 mOhm at 4.4 A drain current with 10 V gate drive. This is the value to use for worst-case conduction loss calculations in the power stage.