Infineon CoolMOS™ IPI65R190C6XKSA1, N-channel MOSFET, 650 V Vdss, 20.2 A Id, 190 mOhm Rds(on) at 10 V, 73 nC Qg, TO-262-3 (PG-TO262-3) through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20.2A (Tc) |
| Power dissipation | 151W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 3.5V @ 730µA |
| Rds on (Max) @ id, vgs | 190mOhm @ 7.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 73 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1620 pF @ 100 V |
The IPI65R190C6XKSA1: Total gate charge is 73 nC at 10 V, with an input capacitance of 1620 pF at 100 V drain-source. The 151 W maximum power dissipation at the case sets the thermal ceiling for combined conduction and switching losses.
The PG-TO262-3 package is a through-hole variant with long leads, intended for board-level mounting where the tab is soldered to a copper island or heatsink.
Design engineers need to verify electrical parameters and pinout for circuit integration.
Sourcing buyers require stock and pricing to complete BOM and procurement.
When the part is unavailable, buyers and techs need a drop-in alternative to avoid redesign.
Lifecycle status determines long-term availability and risk for production and repair.
Maintenance techs and design engineers need fitment into existing PCBs and thermal management.
Brokers and buyers need alternative sources or second-sourcing options for supply chain flexibility.