650 V CoolMOS CFD2 — what this N-channel switch is for
Gate charge and switching — what 118 nC means for the driver
Maximum power dissipation is 277.8 W at the case.
ROHS3 compliance is confirmed, so it meets the current EU substance restrictions.
Infineon IPI65R110CFD CoolMOS CFD2 N-Channel MOSFET, 650 V
MPNIPI65R110CFD
End of Life
Infineon CoolMOS CFD2™ series, N-Channel MOSFET, 650 V drain-source, 110 mOhm Rds(on) at 12.7 A, 31.2 A continuous drain, TO-262-3 through-hole package, -55°C to 150°C junction temperature.
$2.54Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
RoHSROHS3 Compliant
SeriesCoolMOS CFD2™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS CFD2™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 31.2A (Tc) |
| Power dissipation | 277.8W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4.5V @ 1.3mA |
| Rds on (Max) @ id, vgs | 110mOhm @ 12.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 118 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3240 pF @ 100 V |
Product details
Frequently asked questions
Is IPI65R110CFD suitable for high-frequency switching?
With 118 nC gate charge at 10 V, the IPI65R110CFD is suited for hard-switched topologies up to roughly 100 kHz. Above that frequency, switching losses from the Miller charge and output capacitance (3240 pF at 100 V) will dominate; a lower-Qg CoolMOS or a GaN device would be a better fit for 200 kHz+ designs.
Is IPI65R110CFD RoHS compliant?
Yes, the part is ROHS3 compliant, meeting the latest EU restriction of hazardous substances directive.