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Infineon Technologies IPI65R110CFD
Infineon Technologies

Infineon IPI65R110CFD CoolMOS CFD2 N-Channel MOSFET, 650 V

MPNIPI65R110CFD
End of Life

Infineon CoolMOS CFD2™ series, N-Channel MOSFET, 650 V drain-source, 110 mOhm Rds(on) at 12.7 A, 31.2 A continuous drain, TO-262-3 through-hole package, -55°C to 150°C junction temperature.

$2.54Ref. price · indicative, final on quote
IPI65R110CFD datasheet
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPI65R110CFD Technical Specifications
ParameterValue
SeriesCoolMOS CFD2™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C31.2A (Tc)
Power dissipation277.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4.5V @ 1.3mA
Rds on (Max) @ id, vgs110mOhm @ 12.7A, 10V
Gate charge (Qg) (Max) @ vgs118 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3240 pF @ 100 V

Product details

650 V CoolMOS CFD2 — what this N-channel switch is for

The Infineon IPI65R110CFD is an N-channel power MOSFET rated at 650 V drain-source voltage with 110 mOhm on-resistance at 10 V gate drive.

Gate charge and switching — what 118 nC means for the driver

Total gate charge is 118 nC at 10 V gate drive.

Temperature range and thermal handling

Junction temperature range spans -55°C to 150°C. Maximum power dissipation is 277.8 W at the case.

Lifecycle and compliance

ROHS3 compliance is confirmed, so it meets the current EU substance restrictions.

Frequently asked questions

Is IPI65R110CFD suitable for high-frequency switching?

With 118 nC gate charge at 10 V, the IPI65R110CFD is suited for hard-switched topologies up to roughly 100 kHz. Above that frequency, switching losses from the Miller charge and output capacitance (3240 pF at 100 V) will dominate; a lower-Qg CoolMOS or a GaN device would be a better fit for 200 kHz+ designs.

Is IPI65R110CFD RoHS compliant?

Yes, the part is ROHS3 compliant, meeting the latest EU restriction of hazardous substances directive.