Infineon CoolMOS™ series, N-Channel MOSFET, 600 V drain-source voltage, 11 A continuous drain current, 299 mOhm Rds(on) at 10 V, 29 nC gate charge, TO-262-3 (I²Pak) through-hole package, -55 to 150 °C operating junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 96W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 3.5V @ 440µA |
| Rds on (Max) @ id, vgs | 299mOhm @ 6.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1100 pF @ 100 V |
The IPI60R299CP: Input capacitance Ciss is 1100 pF at 100 V drain-source — a moderate figure that, combined with the 29 nC gate charge, means a standard gate-driver IC can switch it at tens of kilohertz without excessive cross-conduction. The 96 W maximum power dissipation (Tc) is the package-level thermal limit; a real design will derate based on case-to-heatsink thermal resistance and ambient temperature.
The maximum on-resistance is 299 mOhm at a drain current of 6.6 A with a 10 V gate drive.
Yes, the IPI60R299CP is ROHS3 compliant.