What this CoolMOS N-channel brings to a 650 V rail
The Infineon IPI60R125CPXKSA1 is a 650 V, 25 A N-channel CoolMOS MOSFET in a through-hole PG-TO262-3 package. It is built for hard-switching topologies — PFC boost stages, LLC resonant converters, flyback and two-switch forward supplies — where the 125 mOhm Rds(on) keeps conduction losses manageable without sacrificing switching speed. The 70 nC gate charge at 10 V drive is a middle-of-pack figure for this Rdson class; expect a gate-driver capable of sourcing and sinking a few amps to hit the switching edges cleanly.
Temperature grade and environment
Rated for a junction temperature range of -55 °C to 150 °C, this MOSFET can live in high-ambient industrial enclosures, outdoor telecom rectifiers, or engine-bay auxiliary supplies. The 208 W power dissipation at the case (Tc) is a package limit; real-world derating depends on the heatsink and airflow. The PG-TO262-3 footprint matches standard TO-262 hole patterns — verify lead form before populating an existing board layout.