The 12.6 mOhm maximum on-resistance at 10 V Vgs sets the conduction loss floor for the power stage — at 46 A the dissipation stays under 27 W before factoring in the temperature derating.
Gate charge and switching — 35 nC at 10 V
Total gate charge is 35 nC at 10 V. For a 100 kHz hard-switched converter, the gate drive current needed is roughly 3.5 mA average — well within a standard totem-pole driver — but the peak current from the driver must clear the Miller plateau without slowing the switching edge. Input capacitance Ciss is 2500 pF at 50 V drain bias.
Through-hole TO-262 — mounting and thermal path
The PG-TO262-3 (I²Pak, TO-262AA) package is a through-hole form with long leads. The exposed metal tab on the back provides the primary thermal path to the heatsink or PCB copper — the 94 W power dissipation limit assumes the tab is held at case temperature. Mounting requires a hole or clip for the tab; the three through-hole leads handle the current. For a rework bench, the lead length and tab geometry are standard across the TO-262 family — the footprint matches the common I²Pak land pattern.
Temperature grade and operating envelope
That 175°C ceiling is typical for automotive-grade power MOSFETs — the part can survive under-hood soak temperatures and high-load transients, but the Rds(on) doubles roughly above 100°C junction, so the thermal design must budget for the hot resistance. The gate threshold voltage maximum is 3.5 V at 46 µA drain current. With the recommended drive voltage window of 6 V to 10 V for rated Rds(on), a standard 12 V gate drive from a PWM controller or gate driver IC fully enhances the channel.
Lifecycle and sourcing posture
Infineon continues to manufacture the OptiMOS 3 series in this voltage class.