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Infineon Technologies IPI120N04S401AKSA1
Infineon Technologies

Infineon IPI120N04S401AKSA1 N-Channel MOSFET, 40 V, 120 A

MPNIPI120N04S401AKSA1
End of Life

Infineon OptiMOS series, IPI120N04S401AKSA1, N-Channel MOSFET, 40 V Vdss, 120 A Id, 1.9 mOhm Rds(on) @ 100 A, 10 V, 176 nC Qg, -55 to 175 °C, PG-TO262-3 through-hole.

$3.67Ref. price · indicative, final on quote
IPI120N04S401AKSA1 datasheet
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPI120N04S401AKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation188W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 140µA
Rds on (Max) @ id, vgs1.9mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs176 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds14000 pF @ 25 V

Product details

40 V, 120 A N-channel in the TO-262-3 I²Pak

It is housed in a PG-TO262-3 through-hole package (I²Pak, TO-262AA), which provides a lower thermal resistance path to the board than a TO-220 for the same die size, making it a common choice for high-current DC-DC converters, motor-drive bridges, and automotive power distribution.

Conduction and switching parametrics

Total gate charge is 176 nC at Vgs = 10 V, which means a gate-driver sourcing 1 A can switch the FET in about 176 ns; the 14000 pF input capacitance at Vds = 25 V confirms the driver must be sized for the Miller plateau region in hard-switched topologies. The maximum gate-source voltage is ±20 V, and the threshold voltage is 4 V at 140 µA drain current, so a 10 V gate drive is the recommended bias for minimum Rds(on) operation.

Frequently asked questions

What is the Rds(on) of IPI120N04S401AKSA1?

The maximum on-resistance is 1.9 mOhm at a drain current of 100 A with a gate-source voltage of 10 V.

What is the gate charge (Qg) of IPI120N04S401AKSA1?

The total gate charge is 176 nC at a gate-source voltage of 10 V.

What is the equivalent or alternative to IPI120N04S401AKSA1?

The IPD50R950CEAUMA1 is a CoolMOS CE N-channel MOSFET, but it is a 500 V, 4.3 A device in a surface-mount D²Pak — it is not a functional alternative for this 40 V, 120 A OptiMOS part.