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Infineon Technologies IPI086N10N3GXKSA1
Infineon Technologies

Infineon IPI086N10N3GXKSA1 N-Channel MOSFET, 100 V, 80 A

MPNIPI086N10N3GXKSA1
End of Life

Infineon OptiMOS IPI086N10N3GXKSA1, N-channel MOSFET, 100 V Vdss, 80 A Id, 8.6 mOhm Rds(on) at 10 V, TO-262-3 through-hole package, -55 to 175 °C.

$1.58Ref. price · indicative, final on quote
IPI086N10N3GXKSA1 datasheet
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPI086N10N3GXKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id3.5V @ 75µA
Rds on (Max) @ id, vgs8.6mOhm @ 73A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3980 pF @ 50 V

Product details

Gate charge and switching speed

Total gate charge is 55 nC at 10 V, with an input capacitance of 3980 pF at 50 V drain-source. The gate charge figure tells the drive circuit designer what the gate driver must deliver per switching cycle — at 100 kHz, that is 5.5 mA average gate current, well within a standard half-bridge driver's capability.

Thermal headroom and package

Rated for 125 W power dissipation at case temperature, with a maximum junction temperature of 175 °C. The TO-262-3 (PG-TO262-3) through-hole package with long leads suits designs where the PCB copper area under the tab sets the thermal resistance — the 175 °C ceiling gives margin in high-ambient or forced-air environments.

Active production, no LTB concern

ROHS3 compliant.

Frequently asked questions

Will the IPI086N10N3GXKSA1 drop into a panel designed for the IPD50R950CEAUMA1?

No — the IPD50R950CEAUMA1 is a 500 V CoolMOS CE device in a surface-mount package, while the IPI086N10N3GXKSA1 is a 100 V OptiMOS in a through-hole TO-262-3 package. They are not pin-compatible or functionally interchangeable without a board redesign.