Infineon OptiMOS® 3 IPI072N10N3G, N-Channel MOSFET, 100 V Vdss, 80 A Id, 7.2 mOhm Rds(on) at 10 V, 68 nC Qg, TO-262-3 (PG-TO262-3-1), -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | OptiMOS® 3 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 3.5V @ 90µA |
| Rds on (Max) @ id, vgs | 7.2mOhm @ 80A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4910 pF @ 50 V |
There is no last-time-buy or end-of-life notice on this part.
The TO-262-3 (I²Pak) package has long leads and a tab that carries the drain. It mounts into a through-hole PCB footprint, which is preferred for high-current power stages where the tab is soldered to a copper island or bolted to a heatsink. The supplier device package is PG-TO262-3-1.
The maximum on-resistance is 7.2 mOhm at 80 A drain current with a 10 V gate drive.