Infineon OptiMOS™ IPI045N10N3GXKSA1, N-Channel MOSFET, 100 V Vdss, 100 A Id, 4.5 mOhm Rds(on) at 10 V, 117 nC Qg, TO-262-3 (PG-TO262-3) through-hole package, -55 to 175 °C operating junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 214W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 3.5V @ 150µA |
| Rds on (Max) @ id, vgs | 4.5mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 117 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8410 pF @ 50 V |
Gate charge is 117 nC at 10 V, which means a standard 1-2 A gate driver can switch this FET at 50-100 kHz without excessive gate-drive losses.
Housed in a TO-262-3 long-lead I²Pak (PG-TO262-3) through-hole package, the part mounts directly to the PCB with the tab available for heatsink attachment. The long leads suit board thicknesses up to about 2.4 mm and allow the tab to sit above the solder joints for thermal management.
At higher junction temperatures the on-resistance increases per the normalised curve in the datasheet.
Continuous drain current is rated 100 A at 25°C case temperature. Derate above 25°C per the power dissipation curve; the 214 W maximum dissipation at case temperature sets the thermal limit.
It is supplied in a TO-262-3 long-lead I²Pak through-hole package, supplier device package PG-TO262-3. The part ships in Tube form.
Yes, it is ROHS3 compliant, meeting the latest RoHS exemption requirements for lead-free assembly.