60 V, 90 A N-channel — the conduction-loss anchor for a through-hole power stage
The Infineon IPI040N06N3GXKSA1 is a 60 V, 90 A N-channel MOSFET from the OptiMOS™ series, built on a standard silicon (Metal Oxide) trench technology.
Gate charge and input capacitance — sizing the driver and the switching-loss budget
The total gate charge is 98 nC at Vgs = 10 V, and the input capacitance (Ciss) is 11000 pF at Vds = 30 V.
175°C junction rating — the thermal headroom for high-ambient environments
This extra margin matters when the MOSFET is mounted in a confined enclosure with limited airflow.
Through-hole TO-262 — the assembly and thermal interface constraints
The IPI040N06N3GXKSA1 comes in a TO-262-3 package (PG-TO262-3, also known as I²Pak with long leads), a through-hole package with a metal drain tab. This package requires a drilled PCB and wave or hand soldering — it cannot go through a reflow oven. The metal tab is electrically connected to the drain, so if you plan to bolt it to a grounded heatsink, you need an electrically insulating thermal pad (like a Sil-Pad or mica washer with thermal grease) to avoid shorting the drain to ground. The tab's large surface area gives good thermal transfer to the heatsink when properly mounted.
The product status is listed as Active, meaning Infineon continues to manufacture this part. There is no last-time-buy notice in effect, so the buyer can place this on the BOM without an imminent obsolescence risk. The part is ROHS3 compliant, covering the current EU RoHS exemption structure.