Infineon OptiMOS™ N-Channel Power MOSFET, 75 V Vdss, 2.3 mOhm Rds(on) @ 100 A, 120 A continuous drain, TO-262-3 Long Leads (PG-TO262-3), -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 75 V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 3.8V @ 273µA |
| Rds on (Max) @ id, vgs | 2.3mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 206 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14400 pF @ 37.5 V |
The wide Tj range also helps when the thermal interface is marginal; the silicon itself won't be the weak link.
Three leads — gate, drain (tab), source — mate to a standard TO-262 hole pattern. The PG-TO262-3 supplier package designation is the Infineon internal code; mechanically it matches the industry-standard I²Pak outline.
No NRND or last-time-buy notices exist for this order code.
Yes, it is ROHS3 compliant.
The maximum gate charge is 206 nC at 10 V. A gate driver with at least 2 A peak current capability will keep switching transitions under 20 ns; a weaker driver increases switching loss at higher frequencies.