The IPG20N10S4L35ATMA1 is a dual N-channel logic-level MOSFET from Infineon's OptiMOS series, rated 100V drain-to-source and 20A continuous drain at 25°C.
Automotive qualification and temperature envelope
The 175°C Tj max gives headroom for fault conditions like stalled motor windings or short-circuit events.
Switching and drive considerations
Total gate charge is 17.4 nC at 10 V — a figure that keeps the drive current requirement modest. At a 100 kHz switching frequency the gate driver needs to source about 1.7 mA per channel, which a standard automotive-grade gate-driver IC handles without thermal stress. Input capacitance is 1105 pF at 25 V Vds. This capacitance, combined with the gate charge, determines the switching loss in hard-switched topologies like a DC-DC converter or a solenoid driver. The 43 W maximum power dissipation is the thermal ceiling for the PG-TDSON-8-4 package; the actual limit depends on the PCB copper area under the drain pad.
Package and footprint
The PG-TDSON-8-4 (8-PowerVDFN) package is a surface-mount, dual-die design with a large exposed drain pad for each channel. The 0.50 mm pitch demands a 4-layer board for proper thermal and electrical fan-out; two-layer designs will struggle to keep the junction temperature below the 175°C limit at full load.