Automotive dual N-channel in a compact TDSON-8
The two channels share a common drain in the PG-TDSON-8-4 package, saving board area compared to two discrete SOT-23 or DPAK parts. AEC-Q101 qualification and a junction temperature range from -55°C to 175°C make this part suitable for automotive under-hood and chassis-domain loads — solenoid drivers, motor pre-drive, and high-side/low-side switching in 12 V and 24 V systems.
On-resistance and gate charge — the switching trade-off
Maximum on-resistance is 13.7 mOhm at 17 A drain current with 10 V gate drive. At logic-level gate thresholds (Vgs(th) max 2.2 V at 20 µA), the FET is fully enhanced by a 5 V gate signal — useful when the gate driver runs on a 5 V rail. Total gate charge is 39 nC at 10 V. At 50 kHz switching frequency the driver must source roughly 2 A peak to charge the gate in the dead-time window; a standard automotive gate driver with 2 A sink/source handles this cleanly. Input capacitance Ciss is 2890 pF at 25 V Vds. This capacitance resonates with the gate-drive loop inductance — a 10 Ω series gate resistor damps the ringing without slowing the edge below the system's EMI limit.
Package and footprint — PG-TDSON-8-4
The 8-PowerVDFN (PG-TDSON-8-4) package has a large exposed drain pad on the underside. The PCB copper area under the pad sets the thermal resistance to ambient; a 1 in² copper pour on a 2 oz board keeps the junction below 125°C at 20 A per channel with natural convection. Surface-mount assembly — the package is compatible with standard lead-free reflow profiles.
Lifecycle and compliance
ROHS3 compliant — no exemptions for lead in solder or PBB/PBDE flame retardants. The OptiMOS family shares the same PG-TDSON-8-4 footprint across many voltage/current grades, but each variant has a unique Rds(on) and gate-charge profile — confirm the BOM position before substituting.