Dual 60V N-channel in a single PG-TDSON-8-10 package
The Infineon IPG20N06S4L11ATMA2 is a dual N-channel MOSFET from the Automotive OptiMOS™ series, rated for 60V drain-source voltage and 20A continuous drain current at 25°C case temperature. Each channel is a logic-level gate device, so a 5V gate drive turns it on fully — confirmed by a maximum gate threshold of 2.2V at 28µA. The part is AEC-Q101 qualified and operates across -55°C to 175°C junction temperature, making it a fit for under-hood automotive loads, industrial motor pre-drives, and high-side switching in 48V board-net applications.
Active production, RoHS3, no LTB risk
Infineon lists the IPG20N06S4L11ATMA2 as Active with a ROHS3 compliant finish. No last-time-buy or obsolescence notice is in effect. For dual-sourcing, Infineon's own OptiMOS portfolio includes functionally similar dual 60V N-channel parts in the same PG-TDSON-8-10 footprint — verify pin compatibility against your layout before substituting.
Mounting and thermal notes
Surface-mount with wettable flank — the PG-TDSON-8-10 package has exposed drain pads on the bottom. Solder paste coverage on the thermal pad is critical.
