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Infineon Technologies IPG20N06S4L11ATMA2

IPG20N06S4L11ATMA2 Infineon Dual N-Channel MOSFET

MPNIPG20N06S4L11ATMA2
End of Life

Infineon IPG20N06S4L11ATMA2, Automotive AEC-Q101 OptiMOS™, 2 N-Channel Dual MOSFET, 60V Vdss, 20A Id, 11.2mOhm Rds(on) max at 10V, Logic Level Gate, 65W, PG-TDSON-8-10, -55 to 175°C.

$1.86Ref. price · indicative, final on quote
Infineon Technologies IPG20N06S4L11ATMA2 datasheet (PDF)
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, OptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPG20N06S4L11ATMA2 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, OptiMOS™
FET type2 N-Channel (Dual)
MountingSurface Mount, Wettable Flank
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power - max65W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-PowerVDFN
Vgs(th) (Max) @ id2.2V @ 28µA
Rds on (Max) @ id, vgs11.2mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs53nC @ 10V
Input capacitance (Ciss) (Max) @ vds4020pF @ 25V

Product details

Dual 60V N-channel in a single PG-TDSON-8-10 package

Each channel is a logic-level gate device, so a 5V gate drive turns it on fully — confirmed by a maximum gate threshold of 2.2V at 28µA.

Active production, RoHS3, no LTB risk

Infineon lists the IPG20N06S4L11ATMA2 as Active with a ROHS3 compliant finish. For dual-sourcing, Infineon's own OptiMOS portfolio includes functionally similar dual 60V N-channel parts in the same PG-TDSON-8-10 footprint — verify pin compatibility against your layout before substituting.

Mounting and thermal notes

Surface-mount with wettable flank — the PG-TDSON-8-10 package has exposed drain pads on the bottom. Solder paste coverage on the thermal pad is critical.

Frequently asked questions

Does IPG20N06S4L11ATMA2 have a lead-free and RoHS compliant finish?

Yes, Infineon lists the IPG20N06S4L11ATMA2 as ROHS3 compliant.