Dual N-channel in a TDSON-8: what the 60 V, 20 A rating buys you
The two channels share a common drain in the 8-PowerVDFN (PG-TDSON-8-4) package, so each half of the pair handles the same load independently — useful for a half-bridge or synchronous buck where the high-side and low-side FETs sit in one package.
On-resistance is 15.5 mOhm maximum at 17 A drain current with 10 V gate drive. That is the conduction-loss floor for each channel at 25 °C junction; expect the usual positive temperature coefficient as the die heats — the datasheet's normalised curve is the reference for the hot junction case. Total gate charge Qg is 29 nC at 10 V. For a 100 kHz switching frequency, the gate drive current per channel is about 2.9 mA — well within the capability of a standard MOSFET driver, but the 2260 pF input capacitance at 25 V drain-source means the driver's peak current still sets the turn-on/turn-off edge rate.