Infineon OptiMOS™ IPG20N06S2L65ATMA1, dual N-channel logic-level MOSFET, 55 V drain-source, 20 A continuous drain, 65 mOhm on-resistance, AEC-Q101 qualified, PG-TDSON-8-4 package.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| Mounting | Surface Mount |
| Drain to source voltage | 55V |
| Current - continuous drain (Id) @ 25°C | 20A |
| Power - max | 43W |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Qualification | AEC-Q101 |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2V @ 14µA |
| Rds on (Max) @ id, vgs | 65mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 410pF @ 25V |
The Infineon IPG20N06S2L65ATMA1 is a dual N-channel logic-level MOSFET from the OptiMOS™ family, integrating two 55 V, 20 A devices in a single PG-TDSON-8-4 package.
The 8-PowerVDFN (PG-TDSON-8-4) package has a large exposed pad for heat sinking to the PCB copper plane; a 2-oz copper pour under the pad improves RthJA significantly.
Yes, it is AEC-Q101 qualified and carries an Automotive grade rating, suitable for under-hood and chassis-level automotive electronics.