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Infineon Technologies IPG20N06S2L50AATMA1

IPG20N06S2L50AATMA1 - Infineon Technologies

MPNIPG20N06S2L50AATMA1
End of Life

MOSFET 2N-CH 55V 20A 8TDSON

$1.22Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPG20N06S2L50AATMA1 specifications
ParameterValue
SeriesOptiMOS™
MountingSurface Mount, Wettable Flank
Drain to source voltage55V
Current - continuous drain (Id) @ 25°C20A
Power - max51W
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
Case8-PowerVDFN
Vgs(th) (Max) @ id2V @ 19µA
Rds on (Max) @ id, vgs50mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs17nC @ 10V
Input capacitance (Ciss) (Max) @ vds560pF @ 25V