Dual N-channel 40 V MOSFET for automotive and industrial loads
The IPG20N04S4L18AATMA1: The device is AEC-Q101 qualified and carries an automotive grade rating, making it suitable for under-hood and chassis-domain electronics where reliability over a wide temperature range is mandatory.
Thermal and switching characteristics for harsh environments
Gate charge totals 15 nC at 10 V, and input capacitance is 1071 pF at 25 V drain-source bias — these numbers define the gate-drive power and switching speed budget for a given PWM frequency. Maximum power dissipation is 26 W at case temperature, which sets the thermal design constraint for the PCB copper area and heatsinking.
Package and mounting for automated assembly
Housed in an 8-lead PowerVDFN package (PG-TDSON-8-10) with wettable flanks, the part supports automated optical inspection (AOI) of solder joints — a requirement for automotive production lines. Surface-mount assembly with wettable flanks improves solder-joint reliability under vibration and thermal cycling compared to standard flat-lead packages.
Lifecycle and compliance status
ROHS3 compliant, with no known PCN or EOL activity at the time of writing.
