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Infineon Technologies IPG20N04S409AATMA1

Infineon IPG20N04S409AATMA1 OptiMOS Dual N-Ch MOSFET

MPNIPG20N04S409AATMA1
End of Life

Infineon OptiMOS IPG20N04S409AATMA1, dual N-channel MOSFET, 40V Vdss, 20A continuous drain current, 8.6mOhm Rds(on) at 10V, PG-TDSON-8-4 package, -55°C to 175°C junction temp, AEC-Q101 qualified.

$1.52Ref. price · indicative, final on quote
Infineon Technologies IPG20N04S409AATMA1 datasheet (PDF)
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPG20N04S409AATMA1 specifications
ParameterValue
SeriesOptiMOS™
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power - max54W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 22µA
Rds on (Max) @ id, vgs8.6mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs28nC @ 10V
Input capacitance (Ciss) (Max) @ vds2250pF @ 25V

Product details

Two FETs in one PowerVDFN package

The Infineon IPG20N04S409AATMA1 is a dual N-channel MOSFET from the OptiMOS series, packing two 40V-rated transistors into a single 8-pin PowerVDFN case (PG-TDSON-8-4).

8.6 mOhm at 10V — the conduction-loss number that matters

The 8.6 mOhm Rds(on) is specified at Vgs=10V, which is the standard gate-drive level for a 12V automotive system. Gate charge is 28 nC at 10V, and input capacitance Ciss is 2250 pF at 25V drain.

PG-TDSON-8-4 footprint — what the board sees

The 8-PowerVDFN package (Infineon calls it PG-TDSON-8-4) is a surface-mount, leadless package with an exposed drain pad on the bottom.

Frequently asked questions

Is the IPG20N04S409AATMA1 automotive qualified (AEC-Q101)?

The -55°C to 175°C junction temperature range supports under-hood and transmission-mounted applications.

Can the IPG20N04S409AATMA1 be used in a 12V automotive system?

Yes. The 40V drain-to-source rating gives you margin above the 12V battery rail, covering load-dump transients that can spike above 30V. The 8.6 mOhm on-resistance at 10V gate drive is well within the output capability of a standard 12V gate driver.