The Infineon IPG20N04S408ATMA1 is a dual N-channel MOSFET from the OptiMOS series, packing two independent 40V, 20A rated switches into a single 8-PowerVDFN package (PG-TDSON-8-4). Each channel delivers a continuous drain current of 20A at 25°C case temperature, with a maximum Rds(on) of 7.6 mOhm at 17A and 10V gate drive — the conduction loss at that operating point is about 1.3W per channel, well within the 65W package power limit when the thermal pad is properly soldered.
Gate charge and switching loss budget
Total gate charge per channel is 36 nC at 10V. For a 100 kHz switching frequency, each channel needs about 3.6 mA average gate-drive current; a 200 kHz design doubles that to 7.2 mA. The 2940 pF input capacitance at 25V drain-source gives a rough Miller plateau time — pair this part with a gate driver that can source and sink at least 2A peak to keep switching edges clean and cross-conduction low.
Temperature range and mounting reality
Without that, the 65W max dissipation is unreachable in practice.
Lifecycle and compliance
ROHS3 compliant.