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Infineon Technologies IPG16N10S461ATMA1
Infineon Technologies

IPG16N10S461ATMA1 Dual N-Ch MOSFET, 100V 16A, PG-TDSON-8-4

MPNIPG16N10S461ATMA1
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Infineon OptiMOS™ IPG16N10S461ATMA1, dual N-channel MOSFET, 100V Vdss, 16A continuous drain, 61mOhm Rds(on) at 10V, PG-TDSON-8-4 package, AEC-Q101 qualified, -55°C to 175°C junction temperature.

$1.21Ref. price · indicative, final on quote
IPG16N10S461ATMA1 datasheet
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPG16N10S461ATMA1 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101, OptiMOS™
FET type2 N-Channel (Dual)
Mounting typeSurface Mount
Drain to source voltage100V
Current - continuous drain (Id) @ 25°C16A
Power - max29W
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-PowerVDFN
Vgs(th) (Max) @ id3.5V @ 9µA
Rds on (Max) @ id, vgs61mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs7nC @ 10V
Input capacitance (Ciss) (Max) @ vds490pF @ 25V

Product details

Dual 100V N-channel in a PG-TDSON-8-4 — what it handles

Each channel has a maximum on-resistance of 61mOhm at 16A and 10V gate drive — the number that sets the conduction loss in a synchronous rectifier or half-bridge leg. The 29W maximum power dissipation per device is a package-limited ceiling; in practice the PG-TDSON-8-4 (Infineon's PowerVDFN with exposed pad) relies on the PCB copper area for thermal spreading.

Gate drive and switching — what the 7nC Qg means

Total gate charge is 7nC at 10V — a low figure that keeps the gate-drive energy per cycle small. For a 100kHz switching frequency the average gate current is about 0.7mA per channel, well within the output capability of a standard MOSFET driver or a microcontroller GPIO with a series resistor. Input capacitance Ciss is 490pF at 25V Vds. Combined with the low Qg, this part switches cleanly without excessive ringing when the gate loop inductance is kept under a few nH — a practical layout guideline for the PG-TDSON-8-4 footprint.

Automotive qualification and production status

The IPG16N10S461ATMA1 carries AEC-Q101 qualification and is listed with an active product status. It is ROHS3 compliant.

Frequently asked questions

Is IPG16N10S461ATMA1 AEC-Q101 qualified?

Yes, the IPG16N10S461ATMA1 is part of the Automotive, AEC-Q101 series from Infineon's OptiMOS™ family, meaning it has passed the automotive-grade reliability tests for discrete semiconductors.

What package does IPG16N10S461ATMA1 use?

It is supplied in an 8-PowerVDFN package, with the supplier device package designation PG-TDSON-8-4.

What is the closest pin-compatible alternative to IPG16N10S461ATMA1?

Within Infineon's OptiMOS™ portfolio, other dual N-channel parts in the same PG-TDSON-8-4 footprint may share the same pinout, but the exact Rds(on) and gate charge ratings differ — verify the datasheet before substituting.