100 V, 4.25 mOhm — sizing the conduction loss
The IPF042N10NF2SATMA1 is an Infineon StrongIRFET™ 2 N-channel power MOSFET rated for 100 V drain-source and 139 A continuous drain at the case. The 4.25 mOhm max Rds(on) at 80 A, 10 V gate drive sets the conduction loss floor.
Gate charge and switching speed trade-offs
Total gate charge is 85 nC at 10 V, with input capacitance of 4000 pF at 50 V Vds.
PG-TO263-7 — rework and footprint notes
The PG-TO263-7 (D2PAK variant) is a surface-mount package with an exposed thermal pad on the bottom.
