Infineon Technologies · StrongIRFET™ 2 Series
Infineon StrongIRFET™ 2 series, N-Channel MOSFET, IPF042N10NF2SATMA1, 100 V Vdss, 4.25 mOhm Rds(on) at 80 A, 10 V, 139 A continuous drain, PG-TO263-7 package, -55°C to 175°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | StrongIRFET™ 2 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 21A (Ta), 139A (Tc) |
| Power dissipation | 3.8W (Ta), 167W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ id | 3.8V @ 93µA |
| Rds on (Max) @ id, vgs | 4.25mOhm @ 80A, 10V |
| Gate charge (Qg) (Max) @ vgs | 85 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4000 pF @ 50 V |
The IPF042N10NF2SATMA1 is an Infineon StrongIRFET™ 2 N-channel power MOSFET rated for 100 V drain-source and 139 A continuous drain at the case.
Total gate charge is 85 nC at 10 V, with input capacitance of 4000 pF at 50 V Vds.
