Infineon StrongIRFET™ 2 series, N-Channel MOSFET, IPF042N10NF2SATMA1, 100 V Vdss, 4.25 mOhm Rds(on) at 80 A, 10 V, 139 A continuous drain, PG-TO263-7 package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | StrongIRFET™ 2 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 21A (Ta), 139A (Tc) |
| Power dissipation | 3.8W (Ta), 167W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ id | 3.8V @ 93µA |
| Rds on (Max) @ id, vgs | 4.25mOhm @ 80A, 10V |
| Gate charge (Qg) (Max) @ vgs | 85 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4000 pF @ 50 V |
The IPF042N10NF2SATMA1 is an Infineon StrongIRFET™ 2 N-channel power MOSFET rated for 100 V drain-source and 139 A continuous drain at the case.
Total gate charge is 85 nC at 10 V, with input capacitance of 4000 pF at 50 V Vds.
Design engineers need to confirm voltage rating matches application requirements to avoid breakdown.
Buyers must ensure compliance with environmental regulations for shipping and end-product requirements.
Sourcing buyers need immediate availability status to prevent production delays.
Supply chain planners require lead time estimates to schedule production and avoid shortages.
Maintenance techs and procurement often search for drop-in replacements when original parts are unavailable or obsoleted.
Design and manufacturing teams need footprint and mounting information for PCB layout and assembly.