80V, 126A N-channel in StrongIRFET™ 2
The IPF039N08NF2SATMA1 is an N-channel MOSFET from Infineon's StrongIRFET™ 2 series, rated for 80 V drain-to-source voltage and 126 A continuous drain current at 25 °C case temperature. Maximum Rds(on) is 3.9 mOhm at 80 A and 10 V gate drive — this is the conduction loss figure that governs efficiency in high-current switching stages like motor drives, DC-DC converters, and battery management systems.
Gate drive and switching profile
Total gate charge (Qg) is 81 nC at Vgs = 10 V, with input capacitance (Ciss) of 3800 pF at Vds = 40 V — these numbers size the gate driver's peak current and the switching transition losses. The recommended drive voltage for minimum on-resistance is 10 V, though the device is specified with Rds(on) also at 6 V, allowing logic-level gate drive with reduced saturation. Maximum gate-to-source voltage is ±20 V, providing margin against ringing on the gate node in hard-switched topologies.
Package and thermal limits
Housed in a PG-TO263-7-14 surface-mount package (D2PAK-like footprint with seven leads and an exposed drain tab), the part dissipates up to 150 W at case temperature and operates over a -55 °C to 175 °C junction range. The exposed pad must be soldered to a sufficient copper area on the PCB to keep the junction temperature below 175 °C under full load — a four-layer board with thermal vias under the tab is typical for this power class.