600 V, 20 A — the switching-stage workhorse
PG-HDSOP-10-1 — thermal and footprint reality
The input capacitance is 1080 pF at 400 V drain-source.
The CoolMOS™ G7 series is Infineon's current-generation high-voltage MOSFET platform.
IPDD60R125G7XTMA1 CoolMOS G7 N-Ch 600V 20A MOSFET, 125mOhm
MPNIPDD60R125G7XTMA1
End of Life
Infineon CoolMOS™ G7, N-Channel MOSFET, 600 V Vdss, 20 A continuous drain, 125 mOhm Rds(on) at 10 V, 27 nC gate charge, PG-HDSOP-10-1 package, -55°C to 150°C junction temperature.
$4.59Ref. price · indicative, final on quote
Packaging10-PowerSOP Module
RoHSROHS3 Compliant
SeriesCoolMOS™ G7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ G7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 120W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 10-PowerSOP Module |
| Vgs(th) (Max) @ id | 4V @ 320µA |
| Rds on (Max) @ id, vgs | 125mOhm @ 6.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 27 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1080 pF @ 400 V |
Product details
Frequently asked questions
What is the Rds(on) of IPDD60R125G7?
The maximum on-resistance is 125 mOhm at 6.4 A drain current with a 10 V gate-source drive.