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Infineon Technologies IPDD60R125G7XTMA1
Infineon Technologies

IPDD60R125G7XTMA1 CoolMOS G7 N-Ch 600V 20A MOSFET, 125mOhm

MPNIPDD60R125G7XTMA1
End of Life

Infineon CoolMOS™ G7, N-Channel MOSFET, 600 V Vdss, 20 A continuous drain, 125 mOhm Rds(on) at 10 V, 27 nC gate charge, PG-HDSOP-10-1 package, -55°C to 150°C junction temperature.

$4.59Ref. price · indicative, final on quote
IPDD60R125G7XTMA1 datasheet
Packaging10-PowerSOP Module
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPDD60R125G7XTMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ G7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation120W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case10-PowerSOP Module
Vgs(th) (Max) @ id4V @ 320µA
Rds on (Max) @ id, vgs125mOhm @ 6.4A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1080 pF @ 400 V

Product details

600 V, 20 A — the switching-stage workhorse

The IPDD60R125G7XTMA1 has a 27 nC total gate charge at 10 V.

PG-HDSOP-10-1 — thermal and footprint reality

The 120 W maximum power dissipation at case temperature assumes that land is connected to a sufficient thermal via array and a bottom-layer copper plane — without that thermal path, the junction-to-ambient resistance rises sharply and the 20 A rating cannot be sustained. The input capacitance is 1080 pF at 400 V drain-source.

The CoolMOS™ G7 series is Infineon's current-generation high-voltage MOSFET platform.

Frequently asked questions

What is the Rds(on) of IPDD60R125G7?

The maximum on-resistance is 125 mOhm at 6.4 A drain current with a 10 V gate-source drive.