Infineon CoolMOS™ CFD7, N-Channel MOSFET, 600 V Vdss, 31 A Id, 105 mOhm Rds(on) @ 7.8 A, 10 V, 36 nC Qg, -55°C to 150°C Tj, PG-HDSOP-10-1 package.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD7 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 600 V |
| Current - continuous drain (Id) @ 25°C | 31A (Tc) |
| Power dissipation | 198W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 10-PowerSOP Module |
| Vgs(th) (Max) @ id | 4.5V @ 390µA |
| Rds on (Max) @ id, vgs | 105mOhm @ 7.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1504 pF @ 400 V |
IPDD60R105CFD7XTMA1 total gate charge is 36 nC at 10 V gate drive. Input capacitance is 1504 pF at 400 V drain-source bias.
The 10-PowerSOP module (PG-HDSOP-10-1) is a surface-mount package with an exposed drain pad. Maximum power dissipation is 198 W at case temperature.
Junction temperature range is -55°C to 150°C.
ROHS3 compliant.
Maximum on-resistance is 105 mOhm at 7.8 A drain current with 10 V gate drive. This is the conduction loss anchor for the power stage design.
Yes, the part is ROHS3 compliant, meaning it meets the lead-free and restricted-substance requirements of the ROHS directive.