600 V CoolMOS in a compact HDSOP-10
The IPDD60R055CFD7XTMA1: The 67 nC total gate charge at 10 V means the gate driver needs to source about 0.67 A peak to hit a 100 ns rise time — well within the capability of a standard 1 A to 2 A MOSFET driver. The 2724 pF input capacitance at 400 V drain bias confirms the gate charge figure and helps the layout engineer size the gate drive loop.
HDSOP-10 footprint and thermal reality
The PG-HDSOP-10-1 package is a proprietary Infineon 10-lead surface-mount module with an exposed thermal pad. The 329 W power dissipation rating assumes the pad is soldered to a substantial copper area on the PCB. At 150°C junction the Rds(on) roughly doubles from the 25°C value — the 55 mOhm figure at 25°C becomes about 110 mOhm hot, which the thermal design must budget for in continuous operation.
Active production, no obsolescence worry
Sourced through independent distribution channels.
Comparing to the IPDD60R065CFD7 sibling
The IPDD60R065CFD7 is the same CoolMOS CFD7 family and same 600 V rating, but with a 65 mOhm Rds(on) — about 18 % higher than the 55 mOhm of this part. At 15.1 A the conduction loss difference is about 2.3 W, which matters in a thermally constrained HDSOP-10 layout. The 65 mOhm variant will run a few degrees cooler for the same copper area, but the 55 mOhm part delivers lower loss at the same current — the trade is cost vs efficiency.