The IPD95R450P7ATMA1: Maximum on-resistance is 450 mOhm at 7.2 A drain current with 10 V gate drive. Input capacitance is 1053 pF at 400 V drain bias.
Thermal envelope and package — board-level mounting
The TO-252-3 (DPak) package with exposed drain tab dissipates up to 104 W at case temperature — the PCB copper area under the tab sets the real-world RthJA. The PG-TO252-3 supplier device package matches the standard DPak footprint; the tab is the drain node, so the thermal pad must be at drain potential.
The CoolMOS™ P7 series is Infineon's current-generation high-voltage MOSFET platform, so the die and package are in volume production.
Cross-shop with the CoolMOS™ CE 500 V sibling
The closest peer in the Infineon portfolio is the IPD50R950CEAUMA1, a 500 V N-channel MOSFET in the same TO-252 package. That part carries a 950 mOhm Rds(on) at 13 V gate drive and a 4.3 A continuous drain rating, with a lower 10.5 nC gate charge. The IPD95R450P7ATMA1 offers nearly double the voltage headroom and half the on-resistance, making it the right choice when the rail exceeds 400 V or when conduction loss must be lower. The CE sibling fits lower-voltage, lower-power designs where the higher Rds(on) is acceptable.