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Infineon Technologies IPD95R2K0P7ATMA1

Infineon IPD95R2K0P7ATMA1 CoolMOS P7 N-Ch MOSFET, 950 V

MPNIPD95R2K0P7ATMA1
End of Life

Infineon CoolMOS™ P7 N-Channel MOSFET, 950 Vdss, 4 A, 2 Ohm Rds(on) at 10 V, DPAK-3 (TO-252-3), -55°C to 150°C, Tape & Reel.

$1.17Ref. price · indicative, final on quote
PackagingTO-252-3, DPAK (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD95R2K0P7ATMA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation37W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 80µA
Rds on (Max) @ id, vgs2Ohm @ 1.7A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds330 pF @ 400 V

Product details

Gate charge and switching — what the 10 nC means

The IPD95R2K0P7ATMA1: With a maximum gate charge of 10 nC at 10 V, this MOSFET switches fast with modest gate-drive current. The input capacitance of 330 pF at 400 V Vds confirms a small Miller plateau.

Lifecycle and sourcing — still active, no LTB watch needed

That means no last-time-buy notice is pending, and the part is still being manufactured for new designs.

Package and handling — DPAK-3 on a reel

The DPAK-3 (TO-252-3) package has a standard footprint with the tab as the drain connection. The part ships on Tape & Reel, which is the usual format for pick-and-place assembly. No special storage beyond the standard MSL precautions.

Frequently asked questions

Is IPD95R2K0P7ATMA1 compatible with my design?

If your design requires a 950 V drain-source blocking voltage, a continuous drain current up to 4 A, and a surface-mount DPAK-3 footprint, this part is compatible. The 2 Ohm Rds(on) at 10 V gate drive sets the conduction loss budget. Verify the gate-drive voltage (10 V recommended for lowest Rds(on)) and the thermal dissipation limit of 37 W at the case temperature.