The total gate charge of 98 nC at 10 V means the gate driver must supply roughly 98 nC per switching cycle; at 100 kHz the average gate-drive current is about 9.8 mA, well within a standard automotive gate-driver IC's capability. Input capacitance Ciss is 6250 pF typical at 25 V drain-source — this sets the switching-speed ceiling. A gate-drive resistance of 10 Ω yields a turn-on time near 60 ns; the designer can trade switching loss against EMI by adjusting the gate resistor.
PG-TO252-3-313 — footprint and thermal management
The tab is the primary thermal path: a 1-inch-square copper pad on the PCB, with thermal vias to an inner-layer plane, keeps the junction temperature below 175°C at 90 A continuous when the case is held at 25 °C. Maximum power dissipation is 136 W at case temperature 25 °C. In practice the ambient derating is steep — at 85 °C ambient in a sealed enclosure the usable continuous current drops to roughly 60 A, depending on board thermal design.