IPD90N10S4L06ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ IPD90N10S4L06ATMA1, N-Channel MOSFET, 100 V Vds, 90 A Id, 6.6 mOhm Rds(on) at 10 V, PG-TO252-3-313, AEC-Q101, -55°C to 175°C.

Infineon Technologies IPD90N10S4L06ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPD90N10S4L06ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation136W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.1V @ 90µA
Rds on (Max) @ id, vgs6.6mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs98 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6250 pF @ 25 V

Technical details

The total gate charge of 98 nC at 10 V means the gate driver must supply roughly 98 nC per switching cycle; at 100 kHz the average gate-drive current is about 9.8 mA, well within a standard automotive gate-driver IC's capability. Input capacitance Ciss is 6250 pF typical at 25 V drain-source — this sets the switching-speed ceiling. A gate-drive resistance of 10 Ω yields a turn-on time near 60 ns; the designer can trade switching loss against EMI by adjusting the gate resistor.

PG-TO252-3-313 — footprint and thermal management

In practice the ambient derating is steep — at 85 °C ambient in a sealed enclosure the usable continuous current drops to roughly 60 A, depending on board thermal design.

IPD90N10S4L06ATMA1
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