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Infineon Technologies IPD90N08S405ATMA1
Infineon Technologies

IPD90N08S405ATMA1 Infineon N-Channel MOSFET, 80 V, 90 A

MPNIPD90N08S405ATMA1
End of Life

Infineon OptiMOS IPD90N08S405ATMA1, N-Channel MOSFET, 80 V Vdss, 90 A Id, 5.3 mOhm Rds(on) at 10 V, PG-TO252-3-313 (DPAK), AEC-Q101, -55 to 175 °C.

$2.82Ref. price · indicative, final on quote
IPD90N08S405ATMA1 datasheet
PackagingTO-252-3, DPAK (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD90N08S405ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation144W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 90µA
Rds on (Max) @ id, vgs5.3mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs68 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4800 pF @ 25 V

Product details

80 V, 90 A N-channel in a DPAK — the BOM-fit anchor

It comes in a surface-mount PG-TO252-3-313 (DPAK) package with the tab as the drain connection.

AEC-Q101 and 175 °C junction — under-hood ready

This part carries AEC-Q101 qualification, the automotive stress-test standard for discrete semiconductors. The gate threshold is specified at 4 V max at 90 µA drain current, so a 10 V gate drive is the recommended rail for the lowest Rds(on).

Gate charge and input capacitance — driver sizing

Total gate charge is 68 nC at 10 V, with an input capacitance of 4800 pF measured at 25 V drain-source. For a 100 kHz hard-switched converter, the average gate-drive current works out to about 6.8 mA — well within the capability of a standard 1 A totem-pole driver. The ±20 V maximum gate-source rating gives headroom for ringing on long gate traces in noisy automotive environments.

Active production — no LTB shadow

It is ROHS3 compliant.

Frequently asked questions

Does the IPD90N08S405ATMA1 have AEC-Q101 qualification?

Yes, the IPD90N08S405ATMA1 is AEC-Q101 qualified, making it suitable for automotive-grade applications.

What is the Rds(on) of the IPD90N08S405ATMA1?

The maximum on-resistance is 5.3 mOhm at a drain current of 90 A and a gate-source voltage of 10 V.