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Infineon Technologies IPD90N06S4L05ATMA2

Infineon IPD90N06S4L05ATMA2 N-Channel MOSFET, 60V 90A

MPNIPD90N06S4L05ATMA2
End of Life

Infineon OptiMOS™ IPD90N06S4L05ATMA2, N-Channel MOSFET, 60V Vdss, 90A Id, 4.6mOhm Rds(on) @ 10V, AEC-Q101, PG-TO252-3-11, -55°C to 175°C.

$1.55Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD90N06S4L05ATMA2 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation107W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.2V @ 60µA
Rds on (Max) @ id, vgs4.6mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8180 pF @ 25 V

Product details

4.6 mOhm Rds(on) at 90 A — the conduction-loss floor

At 90 A, I²R loss is roughly 37 W, which must be managed through the PG-TO252-3-11 package's exposed tab and the PCB copper area.

Automotive qualification and temperature envelope

AEC-Q101 qualified, the IPD90N06S4L05ATMA2 is released for automotive stress and reliability screening. The 175 °C TJ ceiling gives headroom for self-heating at high continuous current without entering the derating zone.

Gate charge and drive requirements

Total gate charge is 110 nC at 10 V, with a maximum gate-source voltage of ±16 V. For a 100 kHz switching frequency, the average gate drive current is 11 mA — well within the capability of a standard automotive gate driver, but the peak current during the Miller plateau must be supplied by the driver's output capacitance. The input capacitance (Ciss) is 8180 pF at 25 V drain-source, which defines the switching loss at the turn-on and turn-off edges.

Sourcing and lifecycle posture

It is ROHS3 compliant. No official second-source cross-reference is listed, so the BOM relies on this single Infineon order code for the position.

PG-TO252-3-11 footprint and thermal management

The maximum power dissipation is 107 W at the case temperature — achieving that requires a low thermal resistance path through the PCB to ambient, typically a 1 oz or 2 oz copper pour on the drain node.

Frequently asked questions

What is the automotive grade of the IPD90N06S4L05ATMA2?

The part is AEC-Q101 qualified, which is the standard automotive stress qualification for discrete semiconductors.

Will the IPD90N06S4L05ATMA2 drop into a board designed for the IPD50R950CEAUMA1?

No — the IPD50R950CEAUMA1 is a 500 V CoolMOS™ CE device with a 950 mOhm Rds(on) in the same PG-TO252-3-11 footprint, but the voltage class, gate drive (13 V vs 10 V), and switching characteristics are completely different. They are not functional replacements.