Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS N-Channel MOSFET, 60 V drain-source, 90 A continuous drain current, 3.8 mOhm max Rds(on) at 10 V gate drive, AEC-Q101 qualified, PG-TO252-3-11 package, -55°C to 175°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 90A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 90µA |
| Rds on (Max) @ id, vgs | 3.8mOhm @ 90A, 10V |
| Gate charge (Qg) (Max) @ vgs | 128 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 10400 pF @ 25 V |
The IPD90N06S404ATMA2 has a total gate charge of 128 nC at 10 V and an input capacitance of 10400 pF at 25 V drain-source.
The PG-TO252-3-11 package has a large exposed tab for thermal management.
ROHS3 compliant.