40 V, 90 A N-channel MOSFET for automotive power switching
The Infineon IPD90N04S404ATMA1 is an N-channel MOSFET from the OptiMOS series, rated for 40 V drain-source voltage and 90 A continuous drain current at 25°C case temperature. It is housed in a surface-mount PG-TO252-3-313 (DPak) package and qualified to AEC-Q101, making it a direct fit for automotive power-train, body-control, and high-current load-switching circuits where conduction loss and thermal cycling matter.
4.1 mOhm Rds(on) — what it means for the load circuit
The maximum on-resistance of 4.1 mOhm is specified at 90 A drain current with a 10 V gate drive. The 71 W power-dissipation limit at case temperature applies.
Automotive-grade qualification and temperature range
AEC-Q101 qualification and a junction temperature range of -55°C to 175°C place this part in the cohort suitable for under-hood and high-ambient automotive environments. The 175°C maximum junction temperature provides headroom for transient overloads in engine-bay or transmission-control modules.
Package and mounting
The PG-TO252-3-313 (DPak) is a three-lead surface-mount package with an exposed tab for thermal dissipation. The mounting type is surface mount, and the part is supplied in Tape & Reel or Cut Tape options. The tab is the drain terminal; PCB layout must account for the tab's electrical potential and thermal pad.
Lifecycle and sourcing
The IPD90N04S404ATMA1 carries an active lifecycle status and is ROHS3 compliant. It is a current-production Infineon part with no announced end-of-life.