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IPD90N04S404ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS IPD90N04S404ATMA1, N-Channel MOSFET, 40 V Vdss, 90 A continuous drain, 4.1 mOhm Rds(on) @ 90 A, 10 V, AEC-Q101, PG-TO252-3-313, -55°C to 175°C.

Infineon Technologies IPD90N04S404ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

IPD90N04S404ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation71W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 35µA
Rds on (Max) @ id, vgs4.1mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs43 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3440 pF @ 25 V

Technical details

40 V, 90 A N-channel MOSFET for automotive power switching

The maximum on-resistance of 4.1 mOhm is specified at 90 A drain current with a 10 V gate drive. The 71 W power-dissipation limit at case temperature applies.

The 175°C maximum junction temperature provides headroom for transient overloads in engine-bay or transmission-control modules.

The PG-TO252-3-313 (DPak) is a three-lead surface-mount package with an exposed tab for thermal dissipation. The tab is the drain terminal; PCB layout must account for the tab's electrical potential and thermal pad.

It is a current-production Infineon part with no announced end-of-life.

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