Infineon OptiMOS™ IPD90N04S403ATMA1, N-Channel MOSFET, 40 V Vdss, 90 A Id, 3.2 mOhm Rds(on) @ 10 V, AEC-Q101, PG-TO252-3-313, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 90A (Tc) |
| Power dissipation | 94W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 53µA |
| Rds on (Max) @ id, vgs | 3.2mOhm @ 90A, 10V |
| Gate charge (Qg) (Max) @ vgs | 66.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5260 pF @ 25 V |
No last-time-buy notice or successor part is indicated in the record, so this order code remains a valid BOM line for new production builds and ongoing volume requirements.
The part is listed with Automotive grade and carries AEC-Q101 qualification, making it suitable for automotive electronics requiring stress-tested semiconductor devices.
No. The IPD50R950CEAUMA1 is a 500 V CoolMOS™ device with a 950 mOhm Rds(on) and a different gate-drive profile — a completely different voltage class and application target. The two are not pin-compatible substitutes.
The part is ROHS3 compliant. Additional compliance documentation (REACH, conflict minerals, etc.) is typically provided by the manufacturer upon request through the distribution channel.