40 V, 2.4 mOhm — the conduction loss floor in an automotive-grade TO-252
The Infineon IPD90N04S402ATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS series, built for low-voltage, high-current switching in automotive and industrial power trains. The part carries AEC-Q101 qualification, making it a qualified choice for under-hood and chassis-domain electronics where reliability screening is mandatory. The junction temperature range extends to 175°C, which provides headroom in high-ambient environments like engine bays or exhaust-side actuator drives.
Gate charge and input capacitance — what the driver sees
Total gate charge at Vgs = 10 V is 118 nC, and the input capacitance Ciss measures 9430 pF at Vds = 25 V. These numbers define the gate-drive current needed for a given switching frequency: a 118 nC gate switched at 50 kHz draws 5.9 mA average from the driver, plus the peak current for the turn-on and turn-off edges. The 9430 pF Ciss means the driver must supply enough peak current to charge the gate capacitance within the desired dead-time window — a 2 A peak driver is typical for this class of device.
Package, footprint, and the thermal path
The part is supplied in the PG-TO252-3-313, a surface-mount DPAK (TO-252) with two leads plus the tab. The exposed drain tab is the primary heat path: power dissipation is rated at 150 W at case temperature, but the real-world thermal limit depends on the PCB copper area under the tab and the airflow across the board. The 0.50 mm pitch demands a controlled soldering profile, and the tab solder joint must be inspected for voiding — a voided tab joint can raise RthJA by 30% or more.
It is ROHS3 compliant.