2.2 mOhm Rds(on) — conduction-loss floor for 90 A switching
The IPD90N03S4L02ATMA1: At a 10 V gate drive, the maximum on-resistance is 2.2 mOhm when the drain carries 90 A. The 136 W power-dissipation rating leaves thermal headroom for switching frequencies where the switching loss is modest.
175°C junction — rated for under-hood and high-temp power stages
The operating-temperature window is -55°C to 175°C.
Gate charge and input capacitance — driver sizing check
The maximum gate charge is 140 nC at 10 V, and the input capacitance (Ciss) is 9750 pF at 25 V drain bias.
Package and footprint — TO-252-3 (DPak)
The device is supplied in a PG-TO252-3-11 package (DPak, 2 leads plus tab), surface-mount. Standard DPak footprint applies; no special land pattern beyond the datasheet recommendation.