P-Channel high-side switch in a 60 V, 16.4 A class
The Infineon IPD900P06NMATMA1 is a P-Channel enhancement-mode MOSFET from the OptiMOS™ series, housed in a PG-TO252-3-313 (DPAK) surface-mount package.
Conduction loss and gate drive budget
At 16.4 A and 90 mOhm, the conduction loss hits 24.2 W — well within the 63 W power dissipation rating at the case, but the junction-to-ambient thermal path in a DPAK will require a solid copper pour on the drain tab. The 27 nC total gate charge at 10 V means a standard gate driver with 1 A peak source can switch the FET in under 30 ns, keeping crossover losses low in a 100 kHz PWM application.
175 °C junction — thermal headroom for tight spots
That extra 25 °C matters in under-hood automotive or motor-drive environments where ambient air hits 105 °C and the heatsink is shared. The 4 V maximum gate threshold at 710 µA ensures the FET is fully enhanced with 5 V logic, though the 10 V drive voltage for minimum Rds(on) is the target for lowest loss.