P-channel power switch for 12V and 24V automotive loads
The Infineon IPD85P04P407ATMA2 is a P-channel enhancement-mode MOSFET from the OptiMOS®-P2 family, qualified to AEC-Q101 for automotive applications. It is specified for a drain-source voltage of 40 V and a continuous drain current of 85 A at 25 °C case temperature, making it a candidate for reverse battery protection, load switching, and motor bridge circuits in 12 V and 24 V vehicle electrical systems. The maximum on-resistance is 7.3 mOhm at a gate drive of 10 V and 85 A drain current. The 88 W power dissipation rating at the case must handle the conduction loss with adequate heatsinking.
Gate drive and switching budget
The total gate charge is 89 nC at a 10 V gate drive. The input capacitance is 6085 pF at 25 V drain-source. The threshold voltage is specified at 4 V maximum with a drain current of 150 µA. The 10 V drive level used for the Rds(on) spec is the practical operating point for minimum conduction loss.
Package and reflow considerations
The package is surface-mount compatible with standard reflow profiles, but the tab's large thermal mass means the solder joint on the tab may need a longer soak time to reach reflow temperature uniformly. The operating junction temperature range is -55 °C to 175 °C, covering under-hood and engine-bay environments.
Lifecycle and sourcing
No official successor or pin-compatible second source is listed on the record for this specific order code.