Infineon CoolMOS™ P7 series, IPD80R900P7ATMA1, N-channel 800 V, 6 A, 900 mOhm Rds(on) at 10 V, 15 nC gate charge, 350 pF Ciss, PG-TO252-3 (DPAK), -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 110µA |
| Rds on (Max) @ id, vgs | 900mOhm @ 2.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 350 pF @ 500 V |
At 6 A the conduction loss reaches roughly 32 W — the 45 W maximum power dissipation in the DPAK package sets the practical duty-cycle limit in continuous operation. Gate charge is 15 nC at 10 V, which keeps the switching loss low enough for 100 kHz hard-switching topologies. The 350 pF input capacitance at 500 V drain-source means a standard gate driver IC can charge and discharge the gate without excessive cross-conduction.
Yes, the IPD80R900P7ATMA1 is ROHS3 compliant per the Infineon lifecycle record.