Infineon CoolMOS™ P7 series, IPD80R750P7ATMA1, N-Channel MOSFET, 800 V Vdss, 7 A Id, 750 mOhm Rds(on) at 10 V, PG-TO252-3 package, surface mount, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 51W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 140µA |
| Rds on (Max) @ id, vgs | 750mOhm @ 2.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 460 pF @ 500 V |
The Infineon IPD80R750P7ATMA1 is an N-channel enhancement-mode MOSFET from the CoolMOS series, built for high-voltage switching in power conversion circuits.
It is ROHS3 compliant, which means the bill of materials meets the current European restriction on hazardous substances without needing an exemption review.