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Infineon Technologies IPD80R750P7ATMA1

Infineon IPD80R750P7ATMA1 N-Channel MOSFET, 800 V, 7 A

MPNIPD80R750P7ATMA1
End of Life

Infineon CoolMOS™ P7 series, IPD80R750P7ATMA1, N-Channel MOSFET, 800 V Vdss, 7 A Id, 750 mOhm Rds(on) at 10 V, PG-TO252-3 package, surface mount, -55 to 150 °C.

$1.52Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD80R750P7ATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation51W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 140µA
Rds on (Max) @ id, vgs750mOhm @ 2.7A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds460 pF @ 500 V

Product details

800 V N-channel in a TO-252-3 — the switching transistor for offline supplies

The Infineon IPD80R750P7ATMA1 is an N-channel enhancement-mode MOSFET from the CoolMOS series, built for high-voltage switching in power conversion circuits.

Gate charge and capacitance — the switching speed budget

A maximum gate charge of 17 nC at 10 V and input capacitance of 460 pF at 500 V drain-source define the switching speed budget.

Lifecycle and compliance — active, ROHS3, no LTB on the horizon

It is ROHS3 compliant, which means the bill of materials meets the current European restriction on hazardous substances without needing an exemption review.